THE INFLUENCE OF GROWTH-CONDITIONS ON SELENIUM INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

[1] AUTOMATIC ELECTROCHEMICAL PROFILING OF HALL-MOBILITY IN SEMICONDUCTORS [J]. ELECTRONICS LETTERS, 1979, 15 (20) : 648 - 650

[2] APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 222 - 228

[3] THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4421 - 4425

[4] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803

[5] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[6] SN AND TE DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS USING A SNTE SOURCE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3010 - 3018

[7] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7214 - 7218

[8] GERMANIUM DOPING OF GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY SOME THERMODYNAMIC ASPECTS [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) : 644 - 647

[9] INTERPLAY OF THERMODYNAMICS AND KINETICS IN MOLECULAR-BEAM EPITAXY (MBE) OF DOPED GALLIUM-ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 444 - 450

[10] GROWTH AND DOPING OF GALLIUM-ARSENIDE USING MOLECULAR-BEAM EPITAXY (MBE) - THERMODYNAMIC AND KINETIC ASPECTS [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 375 - 389

[1] AUTOMATIC ELECTROCHEMICAL PROFILING OF HALL-MOBILITY IN SEMICONDUCTORS [J]. ELECTRONICS LETTERS, 1979, 15 (20) : 648 - 650

[2] APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 222 - 228

[3] THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4421 - 4425

[4] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803

[5] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[6] SN AND TE DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS USING A SNTE SOURCE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3010 - 3018

[7] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7214 - 7218

[8] GERMANIUM DOPING OF GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY SOME THERMODYNAMIC ASPECTS [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) : 644 - 647

[9] INTERPLAY OF THERMODYNAMICS AND KINETICS IN MOLECULAR-BEAM EPITAXY (MBE) OF DOPED GALLIUM-ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 444 - 450

[10] GROWTH AND DOPING OF GALLIUM-ARSENIDE USING MOLECULAR-BEAM EPITAXY (MBE) - THERMODYNAMIC AND KINETIC ASPECTS [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 375 - 389