THE CURRENT UNDERSTANDING OF EPITAXIAL CVD SILICON LAYER DOPING IN THE LIGHT OF MODELING AND THEORY DEVELOPMENT .4. THE PROBLEM OF MORE-THAN-ONE KIND OF DOPANT SPECIES

被引：3

作者：

KUHNE, H

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1987年 / 22卷 / 07期

关键词：

D O I：

10.1002/crat.2170220705

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：883 / 892

页数：10

共 23 条

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