AUTODOPING OF EPITAXIAL SILICON LAYERS (III) - THEORETICAL TREATMENT OF LATERAL AUTODOPING

被引：4

作者：

KUHNE, H

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1986年 / 21卷 / 12期

关键词：

D O I：

10.1002/crat.2170211202

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：1495 / 1502

页数：8

共 10 条

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