A TRAPPING MECHANISM FOR AUTODOPING IN SILICON EPITAXY .2. PARAMETER EXTRACTION AND SIMULATIONS

被引：14

作者：

WONG, M

REIF, R

SRINIVASAN, GR

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[2] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1109/T-ED.1985.21917

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：89 / 94

页数：6

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