ADSORBED LAYER MODEL FOR AUTODOPING MECHANISM IN SILICON EPITAXIAL-GROWTH

被引：16

作者：

TABE, M

NAKAMURA, H

机构：

[1] Nippon Telegraph and Telephone Public Corporation, Musashino Electrical Communication Laboratory, Musashino, Tokyo

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 05期

关键词：

arsenic; silane; surface;

D O I：

10.1149/1.2129149

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The mechanism of arsenic autodoping in silicon epitaxial growth using the pyrolysis of silane has been investigated. It is indicated that autodoping is caused by arsenic-adsorbed layers of the growing surface and of the susceptor formed during prebaking prior to growth. By taking into account the desorption into the gas phase and the incorporation into the epitaxial layer from the arsenic-adsorbed layer, a simple model for autodoping mechanism is proposed which is in good agreement with experimental results. A rate constant for arsenic desorption and an equilibrium constant between the adsorbed layer and the bulk are obtained. © 1979, The Electrochemical Society, Inc. All rights reserved.

引用

页码：822 / 826

页数：5

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