THE EFFECTS OF NH3 PLASMA PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORS

被引：33

作者：

WANG, FS

TSAI, MJ

CHENG, HC

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 300,TAIWAN

[2] UNITED MICROELECTR CORP,HSINCHU 300,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 11期

关键词：

D O I：

10.1109/55.468281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The NH3 plasma passivation has been performed for the first time on the polycrystalline silicon (poly-Si) thin-film transistors (TFT's). It is found that the TFT's after the NH3 plasma passivation achieve better device performances, including the off-current below 0.1 pA/mu m and the on/off current ratio higher than 10(8), and also better hot-carrier reliability as well as thermal stability than the H-2-plasma ones, These improvements were attributed to not only the hydrogen passivation of the grain-boundary dangling bonds, but also the nitrogen pile-up at SiO2/poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grain boundaries of the polysilicon films.

引用

收藏

页码：503 / 505

页数：3

相关论文

共 13 条

[1] HOT-ELECTRON DEGRADATION OF N-CHANNEL POLYSILICON MOSFETS [J].

BANERJEE, S ;

SUNDARESAN, R ;

SHICHIJO, H ;

MALHI, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (02) :152-157

[2]

CHERN HN, 1993, IEEE T ELECTRON DEV, V40, P2301, DOI 10.1109/16.249479

[3] HOT-CARRIER EFFECTS IN N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - A CORRELATION BETWEEN OFF-CURRENT AND TRANSCONDUCTANCE VARIATIONS [J].

FORTUNATO, G ;

PECORA, A ;

TALLARIDA, G ;

MARIUCCI, L ;

REITA, C ;

MIGLIORATO, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (03) :340-346

[4] PHYSICAL MODELS FOR DEGRADATION EFFECTS IN POLYSILICON THIN-FILM TRANSISTORS [J].

HACK, M ;

LEWIS, AG ;

WU, IW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (05) :890-897

[5] IMPROVEMENT OF THIN-GATE OXIDE INTEGRITY USING THROUGH-SILICON-GATE NITROGEN ION-IMPLANTATION [J].

HADDAD, S ;

LIANG, MS .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) :58-60

[6] POLYCRYSTALLINE-SILICON DEVICE TECHNOLOGY FOR LARGE-AREA ELECTRONICS [J].

HAWKINS, WG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (04) :477-481

[7] ACTIVATION-ENERGY OF SOURCE-DRAIN CURRENT IN HYDROGENATED AND UNHYDROGENATED POLYSILICON THIN-FILM TRANSISTORS [J].

KHAN, BA ;

PANDYA, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (07) :1727-1734

[8] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS [J].

LEVINSON, J ;

SHEPHERD, FR ;

SCANLON, PJ ;

WESTWOOD, WD ;

ESTE, G ;

RIDER, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1193-1202

[9]

Lewis A. G., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P264, DOI 10.1109/IEDM.1988.32807

[10] MATERIAL PROPERTIES AND CHARACTERISTICS OF POLYSILICON TRANSISTORS FOR LARGE AREA ELECTRONICS [J].

MIGLIORATO, P ;

MEAKIN, DB .

APPLIED SURFACE SCIENCE, 1987, 30 (1-4) :353-371