MAXIMUM DENSITY OF PB CENTERS AT THE (111)SI SIO2 INTERFACE AFTER VACUUM ANNEAL

被引：30

作者：

STESMANS, A

VANGORP, G

机构：

[1] Department of Physics, Katholieke Universiteit Leuven

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 25期

关键词：

D O I：

10.1063/1.104191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The density of interfacial [111]Pb centers, i.e., 0Si≡Si3 defects with unpaired bond along [111], has been accurately determined by K-band electron spin resonance at 4.3 K on (111)Si/SiO2 structures using various oxidation conditions. Reversible defect depassivation (dehydrogenation) has been monitored by post-oxidation vacuum annealing in the temperature range 752-835°C. It was found that the density of both ESR active and passivated Pb defects is (11.4±0.6)×1012 cm-2 on all (111)Si/SiO2 interfaces prepared by oxidation in dry O2 at 920-1000°C. This number appears to be a natural constant predominantly set by the oxidation temperature; variations in oxidation oxygen pressure (1.5×10-5-840 Torr) and time have little influence. The P b's are found to account for all the fast interface states.

引用

页码：2663 / 2665

页数：3

共 21 条

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