SIZE EFFECTS IN MICROSTRUCTURED RESONANT TUNNELING DIODES

被引：2

作者：

SCHNELL, RD

TEWS, H

机构：

[1] Siemens Research Laboratories, 8000 München 83

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 11期

关键词：

D O I：

10.1016/0038-1101(90)90122-U

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microstructured resonant tunneling diodes are fabricated based on AlGaAs/GaAs double barrier quantum wells grown by metal organic vapour phase epitaxy on semiinsulating GaAs substrates. The active diode areas were varied between 16 and 100 μm2. Diodes with 16 μm2 size showed a 12% decrease in peak-to-valley current ratio and a 40% decrease in peak current density relative to diodes with sizes above 30 μm2. The size effect is explained by surface depletion at the diode sidewalls and by local changes of the external voltage over the diode area. The calculated maximum frequency of oscillation showed no size effect because the increase of the negative differential resistance of the small size diodes is compensated by reduced device capacitance. © 1990.

引用

页码：1467 / 1470

页数：4

共 9 条

[1]

ARNOLD N, 1988, I PHYS C SER, V91, P455

[2] OSCILLATIONS UP TO 420 GHZ IN GAAS/ALAS RESONANT TUNNELING DIODES [J].