Annealing behavior of a Light Scattering Tomography detected Defect near the surface of Si wafers

被引：6

作者：

Furukawa, J

Iwaoka, N

Furuya, H

机构：

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷

关键词：

Czochralski silicon; grown-in defects; Light Scattering Tomography detecting Defect;

D O I：

10.4028/www.scientific.net/MSF.196-201.1725

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The behavior of Light Scattering Tomography detected Defects (LSTD) after annealing located in 0 to about 20 mu m beneath the surface of Si wafers is investigated. LSTDs are detected by the obliquely incident method of infrared light scattering tomography (IR-LST) before and after annealing at temperatures from 1000 degrees C to 1280 degrees C in dry O-2, Ne, Or He. LSTDs remained after annealing at temperatures below 1250 degrees C in dry O2 or Na for 4 hours and disappear after annealing at 1280 degrees C. However, after annealing at 1180 degrees C for 2 hours in H2 ambient, LSTDs located in the region 0 to about 6 mu m beneath the surface of Si wafers disappear, while LSTDs located in the region deeper than about 6 mu m beneath the surface remain.

引用

页码：1725 / 1729

页数：5

共 9 条

[1] ANNEALING BEHAVIOR OF A LIGHT-SCATTERING TOMOGRAPHY DETECTING DEFECT NEAR-THE-SURFACE OF SI WAFERS [J].

FURUKAWA, J ;

FURUYA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (2A) :L156-L158

[2] DETECTION OF BULK MICRODEFECTS UNDERNEATH THE SURFACE OF SI WAFER USING INFRARED LIGHT-SCATTERING TOMOGRAPHY [J].

FURUKAWA, J ;

FURUYA, H ;

SHINGYOUJI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (11A) :5178-5179

[3]

FURUYA H, 1993, I PHYS C SER, V135, P11

[4]

KASHIWAGI A, 38 SPR M JAP SOC APP

[5] INFRARED LIGHT-SCATTERING TOMOGRAPHY WITH AN ELECTRICAL STREAK CAMERA FOR CHARACTERIZATION OF SEMICONDUCTOR CRYSTALS [J].

OGAWA, T ;

NANGO, N .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1986, 57 (06) :1135-1139

[6] CRYSTAL-ORIGINATED SINGULARITIES ON SI WAFER SURFACE AFTER SC1 CLEANING [J].

RYUTA, J ;

MORITA, E ;

TANAKA, T ;

SHIMANUKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (11) :L1947-L1949

[7] DEPENDENCE OF THE GROWN-IN DEFECT DISTRIBUTION ON GROWTH-RATES IN CZOCHRALSKI SILICON [J].

SADAMITSU, S ;

UMENO, S ;

KOIKE, Y ;

HOURAI, M ;

SUMITA, S ;

SHIGEMATSU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9A) :3675-3681

[8]

SHIOTA T, 1993, P SPR M EL SOC HON

[9] RECOGNITION OF D-DEFECTS IN SILICON SINGLE-CRYSTALS BY PREFERENTIAL ETCHING AND EFFECT ON GATE OXIDE INTEGRITY [J].

YAMAGISHI, H ;

FUSEGAWA, I ;

FUJIMAKI, N ;

KATAYAMA, M .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (1A) :A135-A140

← 1 →