EFFECT OF ELASTIC STRAIN ON ENERGY-BAND GAP AND LATTICE-PARAMETER IN III-V-COMPOUNDS

被引：107

作者：

OLSEN, GH

NUESE, CJ

SMITH, RT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 11期

关键词：

D O I：

10.1063/1.324472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5523 / 5529

页数：7

共 26 条

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[18] REDUCTION OF DISLOCATION DENSITIES IN HETEROEPITAXIAL III-V VPE SEMICONDUCTORS [J].

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[19] INTERFACIAL LATTICE MISMATCH EFFECTS IN III-V COMPOUNDS [J].

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[20] ASYMMETRIC CRACKING IN III-V COMPOUNDS [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) :1650-1656

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