OBSERVATION OF THE MECHANOCHEMICALLY POLISHED SURFACE OF SI WAFER BY ELECTRON-MICROSCOPY AND DIFFUSE-X-RAY SCATTERING

被引：10

作者：

HARADA, J ^{[1
]}

KASHIWAGURA, N ^{[1
]}

SAKATA, M ^{[1
]}

MIYATAKE, H ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,LSI RES & DEV LAB,ITAMI,HYOGO 664,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 10期

关键词：

D O I：

10.1063/1.339134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4159 / 4162

页数：4

共 10 条

[1] SCATTERING OF X-RAYS FROM CRYSTAL-SURFACES [J].

ANDREWS, SR ;

COWLEY, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (35) :6427-6439

[2] DIFFUSE X-RAY-SCATTERING FROM SMALL DEFECTS IN A VERY PERFECT SILICON SINGLE-CRYSTAL [J].

HARADA, J ;

WAKAMATSU, K ;

YASUAMI, S .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :271-272

[3] ATOMIC DISPLACEMENTS AT SURFACE OF SI-WAFER(111) [J].

KASHIHARA, Y ;

KAWAMURA, K ;

KASHIWAGURA, N ;

HARADA, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (06) :L1029-L1031

[4] CHARACTERIZATION OF MECHANOCHEMICALLY POLISHED (111) SURFACE OF SILICON CRYSTAL BY DIFFUSE-X-RAY SCATTERING [J].

KASHIWAGURA, N ;

HARADA, J ;

OGINO, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2706-2710

[5] CRYSTAL TRUNCATION RODS AND SURFACE-ROUGHNESS [J].

ROBINSON, IK .

PHYSICAL REVIEW B, 1986, 33 (06) :3830-3836

[6]

SAKATA M, UNPUB

[7]

SHENG TT, 1976, IEEE T ELECTRON DEV, V23, P531, DOI 10.1109/T-ED.1976.18447

[8] ADVANCES IN TRANSMISSION ELECTRON-MICROSCOPE TECHNIQUES APPLIED TO DEVICE FAILURE ANALYSIS [J].

SHENG, TT ;

MARCUS, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :737-743

[9] CHARACTERIZATION OF POLISHED (111) SILICON CRYSTAL-SURFACE BY DIFFUSE-X-RAY SCATTERING [J].

YASUAMI, S ;

HARADA, J .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :3989-3991

[10] OBSERVATION OF SMALL DEFECTS IN SILICON CRYSTAL BY DIFFUSE-X-RAY SCATTERING [J].

YASUAMI, S ;

HARADA, J ;

WAKAMATSU, K .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :6860-6864

← 1 →