LOW-TEMPERATURE (600-650-DEGREES-C) SILICON EPITAXY BY EXCIMER LASER-ASSISTED CHEMICAL VAPOR-DEPOSITION

被引：13

作者：

YAMADA, A

SATOH, A

KONAGAI, M

TAKAHASHI, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 11期

关键词：

D O I：

10.1063/1.343311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4268 / 4272

页数：5

共 12 条

[1] EXCIMER LASER-INDUCED DEPOSITION OF INP - CRYSTALLOGRAPHIC AND MECHANISTIC STUDIES [J].

DONNELLY, VM ;

BRASEN, D ;

APPELBAUM, A ;

GEVA, M .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) :2022-2035

[2] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J].

GLASSBRENNER, CJ ;

SLACK, GA .

PHYSICAL REVIEW, 1964, 134 (4A) :1058-+

[3]

GLAZOV VM, 1969, LIQUID SEMICONDUCTOR, pCH3

[4] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

[5] VACUUM ULTRAVIOLET-ABSORPTION CROSS-SECTIONS OF SIH4, GEH4, SI2H6, AND SI3H8 [J].

ITOH, U ;

TOYOSHIMA, Y ;

ONUKI, H ;

WASHIDA, N ;

IBUKI, T .

JOURNAL OF CHEMICAL PHYSICS, 1986, 85 (09) :4867-4872

[6]

JELLISON GE, 1982, APPL PHYS LETT, V41, P180, DOI 10.1063/1.93454

[7] LASER-HEATING OF SEMICONDUCTORS - EFFECT OF CARRIER DIFFUSION IN NON-LINEAR DYNAMIC HEAT-TRANSPORT PROCESS [J].

KIM, DM ;

KWONG, DL ;

SHAH, RR ;

CROSTHWAIT, DL .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :4995-5006

[8] LOW-TEMPERATURE SILICON EPITAXY BY HOT WALL ULTRAHIGH-VACUUM LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION TECHNIQUES - SURFACE OPTIMIZATION [J].

MEYERSON, BS ;

GANIN, E ;

SMITH, DA ;

NGUYEN, TN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1232-1235

[9] OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV [J].

PHILIPP, HR ;

TAFT, EA .

PHYSICAL REVIEW, 1960, 120 (01) :37-38

[10] THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON [J].

WANG, JC ;

WOOD, RF ;

PRONKO, PP .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :455-458

← 1 2 →