INGAAS SHALLOW JUNCTION FABRICATION USING LANGMUIR-BLODGETT-FILM DIFFUSION SOURCE

被引：10

作者：

SHAH, DM ^{[1
]}

CHAN, WK ^{[1
]}

BHAT, R ^{[1
]}

COX, HM ^{[1
]}

SCHLOTTER, NE ^{[1
]}

CHANG, CC ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 21期

关键词：

D O I：

10.1063/1.102994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new source of cadmium diffusion in In0.53Ga0.47As has been developed. Langmuir-Blodgett (LB) deposited monolayers of cadmium arachidate have been used as a source of cadmium. The LB film has been characterized by grazing incidence infrared spectroscopy and Auger electron spectroscopy. Acceptor profiles obtained by differential Hall technique are presented. Highly doped (NA =2×1019 cm-3) shallow (xj ≊0.1-0.4 μm), p +-n junctions are obtained. Mesa-type p-i-n diodes with 125 μm diameter, ideality factor =1.3, Idark =5 nA at 20 V reverse bias, and Vbreakdown =30 V have been fabricated.

引用

页码：2132 / 2134

页数：3

共 14 条

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