ACCEPTOR STATES AT THE SI-SIO2 INTERFACE GENERATED BY UV AND THEIR EFFECT ON ELECTRON-MOBILITY

被引：9

作者：

KASSABOV, J

DIMITROV, D

GRUEVA, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 01期

关键词：

D O I：

10.1016/0038-1101(88)90085-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：49 / 51

页数：3

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