EFFECT OF INTERFACE TRAPS RELATED TO MOBILE CHARGES ON SILICON N-CHANNEL METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS DETERMINED BY A CHARGE TEMPERATURE TECHNIQUE

被引：6

作者：

HWU, JG

LIN, CM

WANG, WS

机构：

来源：

THIN SOLID FILMS | 1986年 / 142卷 / 02期

关键词：

D O I：

10.1016/0040-6090(86)90003-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：183 / 191

页数：9

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