NOVEL METHOD FOR MEASURING EXCIMER LASER ABLATION THRESHOLDS OF POLYMERS

被引：39

作者：

DYER, PE

JENKINS, SD

SIDHU, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 22期

关键词：

D O I：

10.1063/1.99612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1880 / 1882

页数：3

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[1] DIRECT ETCHING OF POLYMERIC MATERIALS USING A XECL LASER
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[6] CONTROLLED MODIFICATION OF ORGANIC POLYMER SURFACES BY CONTINUOUS WAVE FAR-ULTRAVIOLET (185NM) AND PULSED-LASER (193NM) RADIATION - XPS STUDIES
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[7] SURFACE-PROPERTIES OF POLY(ETHYLENE-TEREPHTHALATE) FILMS MODIFIED BY FAR-ULTRAVIOLET RADIATION AT 193-NM (LASER) AND 185-NM (LOW INTENSITY)
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[8] DIRECT AND ACCURATE MEASUREMENT OF ETCH RATE OF POLYMER-FILMS UNDER FAR-UV IRRADIATION
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (10) : 624 - 625
[9] SELF-DEVELOPING PHOTOETCHING OF POLY(ETHYLENE-TEREPHTHALATE) FILMS BY FAR ULTRAVIOLET EXCIMER LASER-RADIATION
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 576 - 578
[10] ELECTROSTATIC COLLECTION OF DEBRIS RESULTING FROM 193 NM LASER ETCHING OF POLYIMIDE
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 15 - 17