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REFRACTIVE-INDEX, RELAXATION-TIMES AND THE VISCOELASTIC MODEL IN DRY-GROWN SIO2-FILMS ON SI
被引:63
作者
:
LANDSBERGER, LM
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, DEPT MAT SCI & ENGN, STANFORD, CA 94305 USA
STANFORD UNIV, DEPT MAT SCI & ENGN, STANFORD, CA 94305 USA
LANDSBERGER, LM
[
1
]
TILLER, WA
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, DEPT MAT SCI & ENGN, STANFORD, CA 94305 USA
STANFORD UNIV, DEPT MAT SCI & ENGN, STANFORD, CA 94305 USA
TILLER, WA
[
1
]
机构
:
[1]
STANFORD UNIV, DEPT MAT SCI & ENGN, STANFORD, CA 94305 USA
来源
:
APPLIED PHYSICS LETTERS
|
1987年
/ 51卷
/ 18期
关键词
:
D O I
:
10.1063/1.98642
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1416 / 1418
页数:3
相关论文
共 30 条
[21]
INTERSPECIMEN COMPARISON OF REFRACTIVE INDEX OF FUSED SILICA
[J].
MALITSON, IH
论文数:
0
引用数:
0
h-index:
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MALITSON, IH
.
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA,
1965,
55
(10P1)
:1205
-&
[22]
SCHULTZ JM, 1974, POLYM MATERIALS SCI
[23]
A MEASUREMENT OF THE EFFECT OF INTRINSIC FILM STRESS ON THE OVERALL RATE OF THERMAL-OXIDATION OF SILICON
[J].
SRIVASTAVA, JK
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0
引用数:
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h-index:
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SRIVASTAVA, JK
;
IRENE, EA
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0
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0
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0
IRENE, EA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(11)
:2815
-2816
[24]
OPTICAL EVIDENCE FOR A SILICON-SILICON OXIDE INTERLAYER
[J].
TAFT, E
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Company, Research and Development Center, Schenectady
TAFT, E
;
CORDES, L
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Company, Research and Development Center, Schenectady
CORDES, L
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(01)
:131
-134
[25]
A GROWTH-MODEL FOR THE VARIABLE INDEX OF REFRACTION OF THERMAL OXIDES ON SILICON
[J].
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0
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0
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GE, Schenectady, NY, USA, GE, Schenectady, NY, USA
TAFT, EA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
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134
(02)
:475
-476
[26]
DIFFUSION OF OXYGEN IN SILICON THERMAL OXIDES
[J].
TAFT, EA
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0
h-index:
0
机构:
GE, Schenectady, NY, USA, GE, Schenectady, NY, USA
TAFT, EA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(10)
:2486
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[27]
OPTICAL-CONSTANTS OF SILICON AND DRY OXYGEN OXIDES OF SILICON AT 5461A
[J].
TAFT, EA
论文数:
0
引用数:
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h-index:
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TAFT, EA
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(06)
:968
-972
[28]
INDEX OF REFRACTION OF STEAM GROWN OXIDES ON SILICON
[J].
TAFT, EA
论文数:
0
引用数:
0
h-index:
0
TAFT, EA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
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(04)
:993
-994
[29]
KINETICS OF THE THERMAL-OXIDATION OF SILICON .1. THEORETICAL PERSPECTIVE
[J].
TILLER, WA
论文数:
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
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[30]
KINETICS OF THE THERMAL-OXIDATION OF SILICON .2. SOME THEORETICAL EVALUATIONS
[J].
TILLER, WA
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TILLER, WA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(03)
:625
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←
1
2
3
→
共 30 条
[21]
INTERSPECIMEN COMPARISON OF REFRACTIVE INDEX OF FUSED SILICA
[J].
MALITSON, IH
论文数:
0
引用数:
0
h-index:
0
MALITSON, IH
.
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA,
1965,
55
(10P1)
:1205
-&
[22]
SCHULTZ JM, 1974, POLYM MATERIALS SCI
[23]
A MEASUREMENT OF THE EFFECT OF INTRINSIC FILM STRESS ON THE OVERALL RATE OF THERMAL-OXIDATION OF SILICON
[J].
SRIVASTAVA, JK
论文数:
0
引用数:
0
h-index:
0
SRIVASTAVA, JK
;
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
IRENE, EA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(11)
:2815
-2816
[24]
OPTICAL EVIDENCE FOR A SILICON-SILICON OXIDE INTERLAYER
[J].
TAFT, E
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Company, Research and Development Center, Schenectady
TAFT, E
;
CORDES, L
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Company, Research and Development Center, Schenectady
CORDES, L
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(01)
:131
-134
[25]
A GROWTH-MODEL FOR THE VARIABLE INDEX OF REFRACTION OF THERMAL OXIDES ON SILICON
[J].
TAFT, EA
论文数:
0
引用数:
0
h-index:
0
机构:
GE, Schenectady, NY, USA, GE, Schenectady, NY, USA
TAFT, EA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1987,
134
(02)
:475
-476
[26]
DIFFUSION OF OXYGEN IN SILICON THERMAL OXIDES
[J].
TAFT, EA
论文数:
0
引用数:
0
h-index:
0
机构:
GE, Schenectady, NY, USA, GE, Schenectady, NY, USA
TAFT, EA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(10)
:2486
-2489
[27]
OPTICAL-CONSTANTS OF SILICON AND DRY OXYGEN OXIDES OF SILICON AT 5461A
[J].
TAFT, EA
论文数:
0
引用数:
0
h-index:
0
TAFT, EA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(06)
:968
-972
[28]
INDEX OF REFRACTION OF STEAM GROWN OXIDES ON SILICON
[J].
TAFT, EA
论文数:
0
引用数:
0
h-index:
0
TAFT, EA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(04)
:993
-994
[29]
KINETICS OF THE THERMAL-OXIDATION OF SILICON .1. THEORETICAL PERSPECTIVE
[J].
TILLER, WA
论文数:
0
引用数:
0
h-index:
0
TILLER, WA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(03)
:619
-624
[30]
KINETICS OF THE THERMAL-OXIDATION OF SILICON .2. SOME THEORETICAL EVALUATIONS
[J].
TILLER, WA
论文数:
0
引用数:
0
h-index:
0
TILLER, WA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(03)
:625
-632
←
1
2
3
→