PREPARATION AND DIELECTRIC-PROPERTIES OF SRTIO3/BATIO3 MULTILAYER THIN-FILMS BY SOL-GEL METHOD

被引:45
作者
HAYASHI, T
TANAKA, T
机构
[1] Department of Materials Science and Ceramic Technology, Shonan Institute of Technology, Fujisawa, 251
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期
关键词
BATIO3; SRTIO3; SOL-GEL METHOD; MULTILAYER THIN FILM; SOLID SOLUTION REACTION; COMPOSITION GRADIENT;
D O I
10.1143/JJAP.34.5100
中图分类号
O59 [应用物理学];
学科分类号
摘要
SrTiO3/BaTiO3 multilayer thin films were prepared at 650 degrees C on Pt(111)/SiO2/Si(100) substrates by the dip-coating method using metal alkoxides. No formation of (Ba, Sr)TiO3 solid solution between BaTiO3 layers and SrTiO3 layers was detected in X-ray diffraction analysis. The SrTiO3/BaTiO3 multilayer thin films consisted of grain structure with grain size of about 30 nm. A film thickness of about 20 nm was obtained by one cycle of the dip-coating/heating heating process. The SrTiO3/BaTiO3 multilayer thin films with a thickness of 400 nm exhibited dielectric constants of about 400 and loss tangent of 0.03. By reheating the multilayer thin films at temperatures up to 1000 degrees C, (Ba1-xSrx)TiO3 solid solution with the composition gradient between Ba and Sr was formed.
引用
收藏
页码:5100 / 5104
页数:5
相关论文
共 14 条
[1]   SI LSI PROCESS TECHNOLOGY FOR INTEGRATING FERROELECTRIC CAPACITORS [J].
ARITA, K ;
FUJII, E ;
SHIMADA, Y ;
UEMOTO, Y ;
NASU, T ;
INOUE, A ;
MATSUDA, A ;
OTSUKI, T ;
SUZUOKA, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5397-5399
[2]   CONTROL OF GRAIN-STRUCTURE OF LASER-DEPOSITED (BA, SR)TIO3 FILMS TO REDUCE LEAKAGE CURRENT [J].
BHATTACHARYA, P ;
PARK, KH ;
NISHIOKA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5231-5234
[3]   PREPARATION AND PROPERTIES OF FERROELECTRIC BATIO3 THIN-FILMS BY SOL-GEL PROCESS [J].
HAYASHI, T ;
OHJI, N ;
HIROHARA, K ;
FUKUNAGA, T ;
MAIWA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B) :4092-4094
[4]   FILM THICKNESS DEPENDENCE OF DIELECTRIC-PROPERTIES OF BATIO3 THIN-FILMS PREPARED BY SOL-GEL METHOD [J].
HAYASHI, T ;
OJI, N ;
MAIWA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5277-5280
[5]   DIELECTRIC-PROPERTIES OF (BA, SR)TIO3 THIN-FILMS DEPOSITED BY RF-SPUTTERING [J].
HORIKAWA, T ;
MIKAMI, N ;
MAKITA, T ;
TANIMURA, J ;
KATAOKA, M ;
SATO, K ;
NUNOSHITA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B) :4126-4130
[6]  
IGARASHI H, 1991, ELECTRON CERAM, V22, P14
[7]   STEP COVERAGE AND ELECTRICAL-PROPERTIES OF (BA, SR)TIO3 FILMS PREPARED BY LIQUID SOURCE CHEMICAL-VAPOR-DEPOSITION USING TIO(DPM)(2) [J].
KAWAHARA, T ;
YAMAMUKA, M ;
MAKITA, T ;
NAKA, J ;
YUUKI, A ;
MIKAMI, N ;
ONO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5129-5134
[8]   SYNTHESIS OF NOVEL SR SOURCES FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF SRTIO3 [J].
KIMURA, T ;
YAMAUCHI, H ;
MACHIDA, H ;
KOKUBUN, H ;
YAMADA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5119-5124
[9]   DIELECTRIC-PROPERTIES OF (BAXSR1-X)TIO3 THIN-FILMS PREPARED BY RF-SPUTTERING FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATION [J].
KUROIWA, T ;
TSUNEMINE, Y ;
HORIKAWA, T ;
MAKITA, T ;
TANIMURA, J ;
MIKAMI, N ;
SATO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5187-5191
[10]  
Lichtenecker K, 1926, PHYS Z, V27, P115