共 14 条
[1]
SI LSI PROCESS TECHNOLOGY FOR INTEGRATING FERROELECTRIC CAPACITORS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1994, 33 (9B)
:5397-5399
[2]
CONTROL OF GRAIN-STRUCTURE OF LASER-DEPOSITED (BA, SR)TIO3 FILMS TO REDUCE LEAKAGE CURRENT
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1994, 33 (9B)
:5231-5234
[3]
PREPARATION AND PROPERTIES OF FERROELECTRIC BATIO3 THIN-FILMS BY SOL-GEL PROCESS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1993, 32 (9B)
:4092-4094
[4]
FILM THICKNESS DEPENDENCE OF DIELECTRIC-PROPERTIES OF BATIO3 THIN-FILMS PREPARED BY SOL-GEL METHOD
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1994, 33 (9B)
:5277-5280
[5]
DIELECTRIC-PROPERTIES OF (BA, SR)TIO3 THIN-FILMS DEPOSITED BY RF-SPUTTERING
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1993, 32 (9B)
:4126-4130
[6]
IGARASHI H, 1991, ELECTRON CERAM, V22, P14
[7]
STEP COVERAGE AND ELECTRICAL-PROPERTIES OF (BA, SR)TIO3 FILMS PREPARED BY LIQUID SOURCE CHEMICAL-VAPOR-DEPOSITION USING TIO(DPM)(2)
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1994, 33 (9B)
:5129-5134
[8]
SYNTHESIS OF NOVEL SR SOURCES FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF SRTIO3
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1994, 33 (9B)
:5119-5124
[9]
DIELECTRIC-PROPERTIES OF (BAXSR1-X)TIO3 THIN-FILMS PREPARED BY RF-SPUTTERING FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATION
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1994, 33 (9B)
:5187-5191
[10]
Lichtenecker K, 1926, PHYS Z, V27, P115