CHARACTERIZATION OF THE MICROHARDNESS OF ION-IMPLANTED GAP

被引：5

作者：

ASCHERON, C

NEUMANN, H

KUHN, G

机构：

[1] KARL MARX UNIV,SEKT PHYS,WISSENSCH BEREICH HALBLEITERPHYS,O-7010 LEIPZIG,GERMANY

[2] KARL MARX UNIV,SEKT CHEM,WISSENSCH BEREICH KRISTALLOG,O-7010 LEIPZIG,GERMANY

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1991年 / 26卷 / 03期

关键词：

D O I：

10.1002/crat.2170260305

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Implantation induced changes of the microhardness are studied in GaP single crystals which were bombarded with ions in the range of mass numbers M = 1-40. It is observed that point defects and incorporated hydrogen have a stronger hardening effect. The effect of defect complexes is lower, and amorphized layers are softer than crystalline layers.

引用

页码：273 / 281

页数：9

共 19 条

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