INFLUENCE OF INDIUM SEGREGATION ON THE EMISSION FROM INGAAS/GAAS QUANTUM-WELLS

被引：66

作者：

YU, HP

ROBERTS, C

MURRAY, R

机构：

[1] Interdisciplinary Research Centre for Semiconductor Materials, Blackett Laboratory, Imperial College

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 17期

关键词：

D O I：

10.1063/1.113183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indium segregation in InxGa1-xAs/GaAs (0.05<x<0.25) quantum wells grown by molecular beam epitaxy has been investigated using low temperature photoluminescence. Additional features at low energy are evident in some of the spectra that are consistent with trapping of free excitons by In-rich islands at the top interface, which occurs as the result of In segregation.© 1995 American Institute of Physics.

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页码：2253 / 2255

页数：3

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