RESONANT TUNNELING FIELD-EFFECT TRANSISTORS

被引：9

作者：

WOODWARD, TK ^{[1
]}

MCGILL, TC ^{[1
]}

BURNHAM, RD ^{[1
]}

CHUNG, HF ^{[1
]}

机构：

[1] XEROX CORP, PALO ALTO, CA 94304 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1988年 / 4卷 / 01期

关键词：

D O I：

10.1016/0749-6036(88)90257-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1 / 9

页数：9

相关论文

共 32 条

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[6] CLARKE RC, 1986, 1035 NAV OC SYST CTR
[7] FREQUENCY LIMIT OF DOUBLE BARRIER RESONANT TUNNELING OSCILLATORS
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (02) : 94 - 96
[8] ROOM-TEMPERATURE OSCILLATIONS IN A SUPERLATTICE STRUCTURE
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[J]. ELECTRONICS LETTERS, 1986, 22 (03) : 131 - 133
[9] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[10] EASTMAN LF, 1986, 991 NAV OC SYST CTR

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