HIGH-SENSITIVITY ELECTRONIC RAMAN-SPECTROSCOPY FOR ACCEPTOR DETERMINATION IN GALLIUM-ARSENIDE

被引:17
作者
HARRIS, TD
SCHNOES, ML
SEIBLES, L
机构
关键词
D O I
10.1021/ac00184a015
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
引用
收藏
页码:994 / 998
页数:5
相关论文
共 12 条
[1]   INSIGHTS INTO METASTABLE DEFECTS IN SEMIINSULATING GAAS FROM ELECTRONIC RAMAN STUDIES OF NONEQUILIBRIUM HOLES [J].
BRAY, R ;
WAN, K ;
PARKER, JC .
PHYSICAL REVIEW LETTERS, 1986, 57 (19) :2434-2437
[2]  
HARRIS TD, 1988, MATER RES SOC S P, V104, P479
[3]  
HARRIS TD, 1988, J CRYST GROWTH, V89, pR21
[4]   QUANTITATIVE-ANALYSIS OF CARBON IN LIQUID-ENCAPSULATED CZOCHRALSKI GAAS [J].
HOMMA, Y ;
ISHII, Y ;
KOBAYASHI, T ;
OSAKA, J .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2931-2935
[5]   SELECTIVE EXCITATION LUMINESCENCE IN BULK-GROWN GAAS [J].
HUNTER, AT ;
MCGILL, TC .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :169-171
[6]   RAMAN-SPECTROSCOPIC STUDY OF RESIDUAL ACCEPTORS IN SEMI-INSULATING BULK GAAS [J].
WAGNER, J ;
RAMSTEINER, M ;
SEELEWIND, H ;
CLARK, J .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) :802-807
[7]   RESIDUAL ACCEPTOR ASSESSMENT IN AS-GROWN BULK GAAS BY RAMAN AND SELECTIVE PAIR LUMINESCENCE SPECTROSCOPY - A COMPARATIVE-STUDY [J].
WAGNER, J ;
RAMSTEINER, M .
APPLIED PHYSICS LETTERS, 1986, 49 (20) :1369-1371
[8]   CHARACTERIZATION OF GAAS CRYSTALS WITH DIFFERENT DEGREES OF COMPENSATION - ELECTRONIC RAMAN-SCATTERING OF PHOTONEUTRALIZED ACCEPTORS [J].
WAGNER, J ;
SEELEWIND, H .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) :2761-2764
[9]   RAMAN-SCATTERING AS A QUANTITATIVE TOOL FOR RESIDUAL ACCEPTOR ASSESSMENT IN SEMIINSULATING GAAS [J].
WAGNER, J ;
SEELEWIND, H ;
KAUFMANN, U .
APPLIED PHYSICS LETTERS, 1986, 48 (16) :1054-1056
[10]  
WAGNER J, 1986, J INT C PHYSICS SEMI