HYDROGEN ENHANCED OXYGEN DIFFUSION

被引：37

作者：

MURRAY, R

机构：

[1] Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College, London, SW7 2BZ, Prince Consort Road

来源：

PHYSICA B | 1991年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(91)90112-R

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The diffusion of oxygen impurities in Cz silicon is thought to occur by a single process over the temperature range 350-1250-degrees-C. Enhanced oxygen diffusion has been reported for samples which have been subjected to high temperature pre-anneals, deliberate metallic contamination or irradiation by high energy electrons. Recently, enhanced oxygen diffusion has also been observed for samples annealed in a hydrogen plasma and there are correlated enhancements in the rate of production of thermal donors. It seems likely that hydrogen is also responsible for the enhanced rates of oxygen diffusion previously observed and these findings may have important consequences for plasma processing.

引用

页码：115 / 123

页数：9

共 37 条

[1] INTERLABORATORY DETERMINATION OF THE CALIBRATION FACTOR FOR THE MEASUREMENT OF THE INTERSTITIAL OXYGEN-CONTENT OF SILICON BY INFRARED-ABSORPTION [J].

BAGHDADI, A ;

BULLIS, WM ;

CROARKIN, MC ;

LI, YZ ;

SCACE, RI ;

SERIES, RW ;

STALLHOFER, P ;

WATANABE, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (07) :2015-2024

[2] ELECTRONIC DEFECTS INDUCED IN SILICON BY SF6 PLASMA-ETCHING [J].

BELKACEM, A ;

ANDRE, E ;

OBERLIN, JC ;

POMOT, C ;

PAJOT, B ;

CHANTRE, A .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4) :451-455

[3]

BROWN AR, 1988, SEMICOND SCI TECH, V3, P59

[4]

BROWN AR, 1990, IN PRESS 20TH P INT

[5] CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM [J].

CORBETT, JW ;

MCDONALD, RS ;

WATKINS, GD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) :873-&

[6] INTERSTITIAL-O IN SI AND ITS INTERACTIONS WITH H [J].

ESTREICHER, SK .

PHYSICAL REVIEW B, 1990, 41 (14) :9886-9891

[7] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J].

FULLER, CS ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1427-1436

[8] ON THE OUT-DIFFUSION OF OXYGEN FROM SILICON [J].

GAWORZEWSKI, P ;

RITTER, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 67 (02) :511-516

[9] OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON [J].

GOSELE, U ;

TAN, TY .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02) :79-92

[10]

HELMREICH D, 1977, SEMICONDUCTOR SILICO, P626

← 1 2 3 4 →