FABRICATION OF LOW RESISTANCE SUBMICRON GATES IN PSEUDOMORPHIC MODFETS USING OPTICAL CONTACT LITHOGRAPHY

被引：6

作者：

DICKMANN, J ^{[1
]}

GEYER, A ^{[1
]}

DAEMBKES, H ^{[1
]}

NICKEL, H ^{[1
]}

LOSCH, R ^{[1
]}

SCHLAPP, W ^{[1
]}

机构：

[1] GERMAN PO RES CTR DARMSTADT,W-6100 DARMSTADT,GERMANY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 02期

关键词：

D O I：

10.1149/1.2085615

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A new technique has been developed for the fabrication of submicrometer mushroom-shaped gates in pseudomorphic AlGaAs/InGaAs MODFETs. This technique uses standard process technology in conjunction with angle evaporation. A new three-layer structure and a new RIE dry etching technique are used. Making use of this new process, double sidedoped double heterostructure 20% In-mole-fractional pseudomorphic MODFETs with 0.5-mu-m gate length have been fabricated. For the devices a maximum saturation current of IDS = 600 mA/mm and a maximum transconductance of gm = 440 mS/mm have been measured. This demonstrates the potential of the new technology.

引用

页码：491 / 493

页数：3

共 9 条

[1] EXPERIMENTAL COMPARISONS IN THE ELECTRICAL PERFORMANCE OF LONG AND ULTRASHORT GATE LENGTH GAAS-MESFETS [J].