2-LAYER RESIST STRUCTURE FOR ELECTRON-BEAM FABRICATION OF A SUBMICROMETER GATE LENGTH GAAS DEVICE

被引：9

作者：

KATO, T ^{[1
]}

HAYASHI, K ^{[1
]}

SASAKI, Y ^{[1
]}

KATO, T ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,KITA ITAMI WORKS,ITAMI,HYOGO 664,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 04期

关键词：

D O I：

10.1109/T-ED.1987.22992

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：753 / 758

页数：6

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