MECHANICAL STABILITY OF REACTIVE ION-ETCHED POLY (METHYLMETHACRYLATE) AND POLYIMIDE MICROSTRUCTURES IN TRILEVEL ELECTRON-BEAM LITHOGRAPHY

被引：5

作者：

ORO, JA

WOLFE, JC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 11期

关键词：

D O I：

10.1063/1.330106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7379 / 7384

页数：6

共 17 条

[1] PROXIMITY EFFECT DEPENDENCE ON SUBSTRATE MATERIAL [J].

AIZAKI, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1726-1733

[2]

Chapman B., 1980, GLOW DISCHARGE PROCE

[3] DIRECTIONAL OXYGEN-ION-BEAM ETCHING OF CARBONACEOUS MATERIALS [J].

DEGRAFF, PD ;

FLANDERS, DC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1906-1908

[4] PLASMA FORMATION OF BUFFER LAYERS FOR MULTILAYER RESIST STRUCTURES [J].

DOBKIN, DM ;

CANTOS, BD .

ELECTRON DEVICE LETTERS, 1981, 2 (09) :222-224

[5] EXPOSURE MODEL FOR ELECTRON-SENSITIVE RESISTS [J].

GREENEICH, JS ;

VANDUZER, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (05) :286-299

[6] PMMA CO-POLYMERS AS HIGH-SENSITIVITY ELECTRON RESISTS [J].

HATZAKIS, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1984-1988

[7] UV HARDENING OF PHOTO-BEAM AND ELECTRON-BEAM RESIST PATTERNS [J].

HIRAOKA, H ;

PACANSKY, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1132-1135

[8] ION-BOMBARDMENT-INDUCED IMPROVEMENT OF PHOTORESIST MASK PROPERTIES FOR RF SPUTTER-ETCHING [J].

IIDA, Y ;

OKABAYASHI, H ;

SUZUKI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (08) :1313-1318

[9]

JACKEL LD, 1980, APPL PHYS LETT, V39, P286

[10] AN E-BEAM MICROFABRICATION SYSTEM FOR NANOLITHOGRAPHY [J].

LEE, KL ;

AHMED, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :946-949

← 1 2 →