BEHAVIOR OF A RECTIFYING JUNCTION AT THE INTERFACE BETWEEN POROUS SILICON AND ITS SUBSTRATE

被引：37

作者：

PULSFORD, NJ

RIKKEN, GLJA

KESSENER, YARR

LOUS, EJ

VENHUIZEN, AHJ

机构：

[1] Philips Research Laboratories, 5656 AA Eindhoven

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 01期

关键词：

D O I：

10.1063/1.355802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The current injection into metal/porous Si/bulk Si diodes is investigated by transport and photoresponse measurements. Under low forward bias, the diode current is determined by the space charge region at the porous Si/bulk Si interface. The activation energy of the photovoltage shows that holes are injected into porous Si states which have little quantum confinement. This is discussed in terms of the confinement model for porous Si photoluminescence.

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页码：636 / 638

页数：3

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