OPTICAL AND STRUCTURAL-PROPERTIES OF SEMIINSULATING POLYCRYSTALLINE SILICON THIN-FILMS

被引：8

作者：

COMPAGNINI, G ^{[1
]}

LOMBARDO, S ^{[1
]}

REITANO, R ^{[1
]}

CAMPISANO, SU ^{[1
]}

机构：

[1] UNIV CATANIA,DIPARTMENTO FIS,I-95129 CATANIA,ITALY

来源：

JOURNAL OF MATERIALS RESEARCH | 1995年 / 10卷 / 04期

关键词：

D O I：

10.1557/JMR.1995.0885

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical properties of semi-insulating polycrystalline silicon (SIPOS) thin films containing 30 at. % oxygen atoms are investigated in the near ultraviolet, visible and infrared region to improve knowledge on the structure and chemical bonding of these mixtures. An effective medium approximation model is used for a microscopic investigation of the oxide species involved as a function of the annealing temperature (600-1200 degrees C). The results are compared with other optical spectroscopies (infrared and Raman) and with transmission electron microscopy to give a selected picture of the pure and oxide components

引用

收藏

页码：885 / 890

页数：6

相关论文

共 21 条

[1] IR AND RBS SPECTROSCOPY INVESTIGATION OF SEMI-INSULATING PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON LAYERS [J].

ANDRA, W ;

GOTZ, G ;

HOBERT, H ;

MISYUCHENKO, V ;

SAMUILOV, VA ;

STELMAKH, V .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 110 (01) :181-187

[2] OPTICAL-PROPERTIES OF THIN-FILMS [J].

ASPNES, DE .

THIN SOLID FILMS, 1982, 89 (03) :249-262

[3] DIELECTRIC FUNCTION OF SI-SIO2 AND SI-SI3N4 MIXTURES [J].

ASPNES, DE ;

THEETEN, JB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4928-4935

[4] PHYSICAL-PROPERTIES OF SEMIINSULATING POLYCRYSTALLINE SILICON .2. OPTICAL STUDIES OF THIN-FILMS [J].

BRUESCH, P ;

STOCKMEIER, T ;

STUCKI, F ;

BUFFAT, PA ;

LINDNER, JKN .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) :7690-7700

[5] PHYSICAL-PROPERTIES OF SEMIINSULATING POLYCRYSTALLINE SILICON .1. STRUCTURE, ELECTRONIC-PROPERTIES, AND ELECTRICAL-CONDUCTIVITY [J].

BRUESCH, P ;

STOCKMEIER, T ;

STUCKI, F ;

BUFFAT, PA .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) :7677-7689

[6] Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances [J].

Bruggeman, DAG .

ANNALEN DER PHYSIK, 1935, 24 (07) :636-664

[7] THE COMPOSITION AND STRUCTURE OF SIPOS - A HIGH-SPATIAL-RESOLUTION ELECTRON-MICROSCOPY STUDY [J].

CATALANO, M ;

KIM, MJ ;

CARPENTER, RW ;

DASCHOWDHURY, K ;

WONG, J .

JOURNAL OF MATERIALS RESEARCH, 1993, 8 (11) :2893-2901

[8] LOW-ENERGY HYDROGEN-ION BOMBARDMENT DAMAGE IN SILICON - AN INSITU OPTICAL INVESTIGATION [J].

COLLINS, RW ;

CAVESE, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05) :2797-2803

[9] OPTICAL-CONSTANTS OF ION-IRRADIATED HYDROGENATED AMORPHOUS-CARBON FILMS [J].

COMPAGNINI, G ;

FOTI, G ;

REITANO, R ;

MONDIO, G .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 162 (03) :237-243

[10] ELLIPSOMETRY MEASUREMENT OF THE COMPLEX REFRACTIVE-INDEX AND THICKNESS OF POLYSILICON THIN-FILMS [J].

HO, JH ;

LEE, CL ;

LEI, TF ;

CHAO, TS .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1990, 7 (02) :196-205