A HIGH-CURRENT DENSITY AND LONG LIFETIME ECR SOURCE FOR OXYGEN IMPLANTERS

A high-current ECR source has been developed for oxygen implanters for use in fabricating separation by implanted oxygen (SIMOX) substrates. The new source has the following features: (1) high-current density (150 mA/cm2) and large extracted current (more than 200 mA), (2) stable and long lifetime operation (more than 200 h), (3) high O+ ratio (more than 80%), and (4) low-divergence beam. The improved performance is obtained by incorporating the following: (1) Localized high-density plasma generation at the center of the plasma chamber. (2) A newly developed multilayer window to satisfy two requirements: efficient coupling of the microwave with high-density plasma and high resistance to high-speed backstream electrons. (3) Optimized combination of plasma chamber length and axial magnetic field distribution. (4) Sophisticated compact magnetic circuit that yields the optimum magnetic field for obtaining high-density plasma. An industrial-version ECR source was developed for production use on EATON NV-200 implanters. The source was installed on an NV-200 and used to implant oxygen ions to Si wafers. Good performance compared to a duopigatron source was obtained in terms of beam transport efficiency and reliability of source operation.