TIME-DEPENDENT DEGRADATION OF MOSFET CHANNEL MOBILITY FOLLOWING PULSED IRRADIATION

被引：45

作者：

MCLEAN, FB

BOESCH, HE

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45369

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1772 / 1783

页数：12

共 25 条

[1] HOLE REMOVAL IN THIN-GATE MOSFETS BY TUNNELING [J].

BENEDETTO, JM ;

BOESCH, HE ;

MCLEAN, FB ;

MIZE, JP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :3916-3920

[2] TIME-DEPENDENT INTERFACE TRAP EFFECTS IN MOS DEVICES [J].

BOESCH, HE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1160-1167

[3] CHARGE-SHEET MODEL-FITTING TO EXTRACT RADIATION-INDUCED OXIDE AND INTERFACE CHARGE [J].

GALLOWAY, KF ;

WILSON, CL ;

WITTE, LC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4461-4465

[4] A SIMPLE-MODEL FOR SEPARATING INTERFACE AND OXIDE CHARGE EFFECTS IN MOS DEVICE CHARACTERISTICS [J].

GALLOWAY, KF ;

GAITAN, M ;

RUSSELL, TJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1497-1501

[5] LOGARITHMIC DETRAPPING RESPONSE FOR HOLES INJECTED INTO SIO2 AND THE INFLUENCE OF THERMAL-ACTIVATION AND ELECTRIC-FIELDS [J].

LAKSHMANNA, V ;

VENGURLEKAR, AS .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4548-4554

[6] REVERSIBILITY OF TRAPPED HOLE ANNEALING [J].

LELIS, AJ ;

BOESCH, HE ;

OLDHAM, TR ;

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1186-1191

[7]

LELIS AJ, 1989, IEEE NUCL S, V36

[8]

Li J., 1987, J APPL PHYS, V62, P4212

[9]

Manzini S., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P112

[10]

McGarrity J M, 1978, PHYSICS SIO2 ITS INT, V428

← 1 2 3 →