INTERFACIAL PROPERTIES OF N-GAAS AND POLYMER DEPOSITED BY PLASMA CHEMICAL VAPOR-DEPOSITION

被引：16

作者：

MANORAMA, V

BHORASKAR, SV

RAO, VJ

KSHIRSAGAR, ST

机构：

[1] NATL CHEM LAB,DIV PHYS CHEM,POONA 411008,MAHARASHTRA,INDIA

[2] UNIV POONA,DEPT PHYS,POONA 411007,MAHARASHTRA,INDIA

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 16期

关键词：

D O I：

10.1063/1.102224

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1641 / 1643

页数：3

共 17 条

[1]

ABSTREITER G, 1984, SPRINGER TOPICS APPL, V54

[2] MONO-CRYSTALLINE ALUMINUM OHMIC CONTACT TO N-GAAS BY H2S ADSORPTION [J].

MASSIES, J ;

CHAPLART, J ;

LAVIRON, M ;

LINH, NT .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :693-695

[3] INVERSION-LAYERS ON INP [J].

MEINERS, LG ;

LILE, DL ;

COLLINS, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1458-1461

[4] REDUCTION OF GAAS SURFACE RECOMBINATION VELOCITY BY CHEMICAL TREATMENT [J].

NELSON, RJ ;

WILLIAMS, JS ;

LEAMY, HJ ;

MILLER, B ;

CASEY, HC ;

PARKINSON, BA ;

HELLER, A .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :76-79

[5] NEAR-IDEAL TRANSPORT IN AN ALGAAS GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY NA2S.9H2O REGROWTH [J].

NOTTENBURG, RN ;

SANDROFF, CJ ;

HUMPHREY, DA ;

HOLLENBECK, TH ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1988, 52 (03) :218-220

[6] PASSIVATION OF THE GAAS SURFACE BY AN AMORPHOUS PHOSPHORUS OVERLAYER [J].

OLEGO, DJ ;

SCHACHTER, R ;

BAUMANN, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1097-1098

[7] RAMAN-SCATTERING STUDIES OF SURFACE SPACE-CHARGE LAYERS AND SCHOTTKY-BARRIER FORMATION IN INP [J].

PINCZUK, A ;

BALLMAN, AA ;

NAHORY, RE ;

POLLACK, MA ;

WORLOCK, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1168-1170

[8]

RAO VD, UNPUB

[9] PASSIVATION OF PINNED N-GAAS SURFACES BY A PLASMA-POLYMERIZED THIN-FILM [J].

RAO, VJ ;

MANORAMA, V ;

BHORASKAR, SV .

APPLIED PHYSICS LETTERS, 1989, 54 (18) :1799-1801

[10] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION [J].

SANDROFF, CJ ;

NOTTENBURG, RN ;

BISCHOFF, JC ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :33-35

← 1 2 →