MECHANICAL-PROPERTIES OF HEAT-TREATED CZOCHRALSKI-GROWN SILICON-CRYSTALS

被引：37

作者：

YASUTAKE, K

UMENO, M

KAWABE, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 09期

关键词：

D O I：

10.1063/1.92075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：789 / 791

页数：3

共 10 条

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[7] EFFECT OF SIO2 PRECIPITATION IN SI ON GENERATION CURRENTS IN MOS CAPACITORS [J].

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[8] GETTERING OF SURFACE AND BULK IMPURITIES IN CZOCHRALSKI SILICON WAFERS [J].

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APPLIED PHYSICS LETTERS, 1978, 32 (11) :747-749

[9] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J].

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[10] LIFETIME IMPROVEMENT IN CZOCHRALSKI-GROWN SILICON-WAFERS BY THE USE OF A 2-STEP ANNEALING [J].

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KISHINO, S ;

MATSUSHITA, Y ;

IIZUKA, T .

APPLIED PHYSICS LETTERS, 1980, 36 (03) :195-197

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