DEFECT STRUCTURE AND GENERATION OF INTERFACE STATES IN MOS STRUCTURES

被引：21

作者：

DOTHANH, L

ASLAM, M

BALK, P

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 08期

关键词：

D O I：

10.1016/0038-1101(86)90186-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：829 / 840

页数：12

共 41 条

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