HIGH-SPEED SENSING SCHEME FOR CMOS DRAMS

被引：8

作者：

DHONG, SH ^{[1
]}

LU, NCC ^{[1
]}

HWANG, W ^{[1
]}

PARKE, SA ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1988年 / 23卷 / 01期

关键词：

D O I：

10.1109/4.253

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：34 / 40

页数：7

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