VERY HIGH-CARBON INCORPORATION IN METALORGANIC VAPOR-PHASE EPITAXY OF HEAVILY DOPED P-TYPE GAAS

被引:119
作者
HANNA, MC [1 ]
LU, ZH [1 ]
MAJERFELD, A [1 ]
机构
[1] UNIV COLORADO,CTR OPTOELECTR COMP SYST,BOULDER,CO 80309
关键词
D O I
10.1063/1.104960
中图分类号
O59 [应用物理学];
学科分类号
摘要
Very high C incorporation (> 10(20) cm-3) in GaAs was achieved by atmospheric pressure metalorganic vapor phase epitaxy (AP-MOVPE) using CCl4 as a dopant gas. Hole densities up to p = 1.2 x 10(20) cm-3 (at least three times higher than previously reported by MOVPE) were obtained at a growth temperature of 600-degrees-C and a V/III ratio of 2.8. The highest atomic C concentration was 1.5 x 10(20) cm-3. The hole mobilities were approximately 50% larger than previously reported. CCl4 was found to suppress the formation of gallium droplets and whisker growth which normally occur under low-temperature, low V/III ratio growth conditions, allowing the growth of thin (< 1-mu-m) heavily doped layers with mirror-like surface morphologies. Layers with p approximately 1 X 10(20) cm-3 showed a lattice contraction with DELTA-a/a = -9.3 X 10(-4). Photoluminescence studies indicate a significant band-gap shrinkage at high doping levels.
引用
收藏
页码:164 / 166
页数:3
相关论文
共 16 条
  • [11] MECHANISM OF CARBON INCORPORATION IN MOCVD GAAS
    KUECH, TF
    VEUHOFF, E
    [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 148 - 156
  • [12] CONTROLLED CARBON DOPING OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    KUECH, TF
    TISCHLER, MA
    WANG, PJ
    SCILLA, G
    POTEMSKI, R
    CARDONE, F
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (14) : 1317 - 1319
  • [13] HEAVY CARBON DOPING IN METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR GAAS USING A LOW V/III-RATIO
    KUSHIBE, M
    EGUCHI, K
    FUNAMIZU, M
    OHBA, Y
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (13) : 1248 - 1250
  • [14] PHOTO-LUMINESCENCE IN HEAVILY DOPED GAAS .1. TEMPERATURE AND HOLE-CONCENTRATION DEPENDENCE
    OLEGO, D
    CARDONA, M
    [J]. PHYSICAL REVIEW B, 1980, 22 (02) : 886 - 893
  • [15] CHARACTERIZATION OF P-TYPE GAAS HEAVILY DOPED WITH CARBON GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    SAITO, K
    TOKUMITSU, E
    AKATSUKA, T
    MIYAUCHI, M
    YAMADA, T
    KONAGAI, M
    TAKAHASHI, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) : 3975 - 3979
  • [16] INTENTIONAL P-TYPE DOPING BY CARBON IN METALORGANIC MBE OF GAAS
    WEYERS, M
    PUTZ, N
    HEINECKE, H
    HEYEN, M
    LUTH, H
    BALK, P
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) : 57 - 59