ON THE ASPECTS OF GAAS INITIAL-STAGE BAND BENDING

被引：6

作者：

CAO, R

MIYANO, K

KENDELEWICZ, T

LINDAU, I

SPICER, WE

机构：

[1] Stanford Electronics Laboratories, Stanford University, Stanford, CA

来源：

PHYSICA SCRIPTA | 1990年 / 41卷 / 06期

关键词：

D O I：

10.1088/0031-8949/41/6/038

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

GaAs band bending in the low adatom coverage regime (1014 cm−2) has been investigated using photoelectron spectroscopy. Surface states originating from adatoms chemisorbed on the GaAs surface are responsible for this band bending, which can be described quantitatively by the depletion approximation. A relationship between the energy levels of surface donor states and the first ionization potential is established and is supported by recent theoretical calculations. © 1990 IOP Publishing Ltd.

引用

页码：887 / 891

页数：5

共 22 条

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