P-N-JUNCTION DIODE MADE OF SEMICONDUCTING DIAMOND FILMS

被引：29

作者：

OKANO, K

KIYOTA, H

IWASAKI, T

KUROSU, T

IIDA, M

NAKAMURA, T

机构：

[1] Department of Electronics, School of Engineering, Tokai University, Hiratsuka, Kanagawa 259-12

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 08期

关键词：

D O I：

10.1063/1.104506

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A diamond p-n junction diode fabricated by the chemical vapor deposition technique, shows distinct rectification characteristics. From the electron beam induced current measurement, the existence of a depletion region or a space-charge region around the interface between the n- and p-type semiconducting diamond layers was identified.

引用

收藏

页码：840 / 841

页数：2

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共 9 条

[1] HIGH-TEMPERATURE POINT-CONTACT TRANSISTORS AND SCHOTTKY DIODES FORMED ON SYNTHETIC BORON-DOPED DIAMOND [J].

GEIS, MW ;

RATHMAN, DD ;

EHRLICH, DJ ;

MURPHY, RA ;

LINDLEY, WT .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :341-343

[2] ELECTRICAL CHARACTERISTICS OF SCHOTTKY DIODES FABRICATED USING PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS [J].

GILDENBLAT, GS ;

GROT, SA ;

WRONSKI, CR ;

BADZIAN, AR ;

BADZIAN, T ;

MESSIER, R .

APPLIED PHYSICS LETTERS, 1988, 53 (07) :586-588

[3] CHARGE COLLECTION SCANNING ELECTRON-MICROSCOPY [J].

LEAMY, HJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :R51-R80

[4] HIGH-TEMPERATURE CUBIC BORON-NITRIDE P-N-JUNCTION DIODE MADE AT HIGH-PRESSURE [J].

MISHIMA, O ;

TANAKA, J ;

YAMAOKA, S ;

FUKUNAGA, O .

SCIENCE, 1987, 238 (4824) :181-183

[5] FABRICATION OF A DIAMOND P-N-JUNCTION DIODE USING THE CHEMICAL VAPOR-DEPOSITION TECHNIQUE [J].

OKANO, K ;

KIYOTA, H ;

IWASAKI, T ;

NAKAMURA, Y ;

AKIBA, Y ;

KUROSU, T ;

IIDA, M ;

NAKAMURA, T .

SOLID-STATE ELECTRONICS, 1991, 34 (02) :139-141

[6] SYNTHESIS OF N-TYPE SEMICONDUCTING DIAMOND FILM USING DIPHOSPHORUS PENTAOXIDE AS THE DOPING SOURCE [J].

OKANO, K ;

KIYOTA, H ;

IWASAKI, T ;

NAKAMURA, Y ;

AKIBA, Y ;

KUROSU, T ;

IIDA, M ;

NAKAMURA, T .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 51 (04) :344-346

[7] SYNTHESIS OF DIAMOND THIN-FILMS HAVING SEMICONDUCTIVE PROPERTIES [J].

OKANO, K ;

NARUKI, H ;

AKIBA, Y ;

KUROSU, T ;

IIDA, M ;

HIROSE, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02) :L173-L175

[8] CHARACTERIZATION OF BORON-DOPED DIAMOND FILM [J].

OKANO, K ;

NARUKI, H ;

AKIBA, Y ;

KUROSU, T ;

IIDA, M ;

HIROSE, Y ;

NAKAMURA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (06) :1066-1071

[9] ELECTRICAL CHARACTERISTICS OF METAL CONTACTS TO BORON-DOPED DIAMOND EPITAXIAL FILM [J].

SHIOMI, H ;

NAKAHATA, H ;

IMAI, T ;

NISHIBAYASHI, Y ;

FUJIMORI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (05) :758-762