PLATINUM GETTERING IN SILICON - PRECIPITATION OF PTSI ON DIFFUSION-INDUCED DISLOCATIONS AND ON SIP PRECIPITATES

被引：4

作者：

CORREIA, A ^{[1
]}

PICHAUD, B ^{[1
]}

LHORTE, A ^{[1
]}

QUOIRIN, JB ^{[1
]}

机构：

[1] SGS THOMSON MICROELECTR, TOURS, FRANCE

来源：

MATERIALS SCIENCE AND TECHNOLOGY | 1995年 / 11卷 / 07期

关键词：

D O I：

10.1080/17432847.1995.11945565

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transmission electron microscopy was used to study Si/SiO2 interfaces in Pt doped fast rectifiers. Orthorhombic PtSi (monocrystalline) precipitates at the n(+)-Si/SiO2 and p(+)-Si/SiO2 interfaces were observed. This precipitation can be related to the presence of dislocations induced by the P or B doping (networks parallel to the surface) and to SiP precipitates. Two epitaxial relationships were observed for the PtSi precipitation: (010) PtSi parallel to{111} Si and (001) PtSi parallel to{110} Si. Different Pt diffusion temperatures and cooling rates were used and it was shown that the reverse recovery time is influenced by the diffusion temperature, whereas the gettering efficiency and the occurrence of soft breakdown are reduced by slow cooling.

引用

页码：691 / 695

页数：5

共 28 条

[1] MICROSTRUCTURAL AND ELECTRICAL PROPERTIES OF THIN PTSI FILMS AND THEIR RELATIONSHIPS TO DEPOSITION PARAMETERS [J].