LOW-LOSS BRAGG-REFLECTOR LATERAL-TRANSVERSE-MODE CONFINEMENT IN ALGAINP RED LASER

被引：3

作者：

UENO, Y

机构：

[1] Opto-Electronic Device Research Laboratory, OptoElectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 10期

关键词：

D O I：

10.1109/3.328604

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-loss Bragg-reflector-waveguide (BRW) structure is proposed for AlGaInP red lasers. This BRW laser uses (AlGaInP/GaAs)n Bragg-reflector (BR) block layers in place of conventional GaAs blocl layers. Propagating-mode calculations reveal that an aluminum content (x) lower than 0.2 for (AlxGa1-x)0.5In0.5P in the BR block layers is sufficient for reducing mode loss together with confining the lateral transverse mode. Mode loss in the (AlGaInP/GaAs)n BR region is reduced resonantly to one-third that of a conventional GaAs block region. This reduction originates from a combination of Bragg reflection and the low absorption loss in the AlGaInP crystal. The refractive-index step, formed at the edge of a ridge stripe by the BR block layers, is around 1 x 10(-2).

引用

页码：2239 / 2244

页数：6

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