ACTIVE OPTICAL NOR LOGIC DEVICES USING SURFACE-EMITTING LASERS

被引:15
作者
LEE, YH
SONG, JI
KIM, MS
SHIM, CS
TELL, B
LEIBENGUTH, RE
机构
[1] BELL COMMUN RES INC,RED BANK,NJ 07701
[2] AT&T BELL LABS,BREINIGVILLE,PA 18031
[3] AT&T BELL LABS,HOLMDEL,NJ 07733
[4] KOREA ADV INST SCI & TECHNOL,SEOUL 131,SOUTH KOREA
关键词
D O I
10.1109/68.136493
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Cascadable active laser logic devices are described, demonstrating NOR and INVERTER functions with negative optical gain of 5. The surface-emitting laser logic device consists of an AlGaAs superlattice surface-emitting laser discretely connected to an AlGaAs heterojunction phototransistor in parallel. The optical logic output of 0.5 mW is controlled off with 100-mu-W incident (44-mu-W absorbed) on the heterojunction phototransistor part of the device.
引用
收藏
页码:479 / 482
页数:4
相关论文
共 9 条
[1]   MONOLITHIC OPTOELECTRONIC INTEGRATION OF A GAALAS LASER, A FIELD-EFFECT TRANSISTOR, AND A PHOTODIODE [J].
BARCHAIM, N ;
LAU, KY ;
URY, I ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1984, 44 (10) :941-943
[2]  
CHAN WK, 1990, ANN M OPT SOC AM
[3]   SUBMILLIAMP THRESHOLD VERTICAL-CAVITY LASER-DIODES [J].
GEELS, RS ;
COLDREN, LA .
APPLIED PHYSICS LETTERS, 1990, 57 (16) :1605-1607
[4]   BURIED HETEROSTRUCTURE GAAS/GAALAS DISTRIBUTED BRAGG REFLECTOR SURFACE EMITTING LASER WITH VERY LOW THRESHOLD (5.2 MA) UNDER ROOM-TEMPERATURE CW CONDITIONS [J].
IBARAKI, A ;
KAWASHIMA, K ;
FURUSAWA, K ;
ISHIKAWA, T ;
YAMAGUCHI, T ;
NIINA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04) :L667-L668
[5]   LOW-THRESHOLD ELECTRICALLY PUMPED VERTICAL-CAVITY SURFACE-EMITTING MICROLASERS [J].
JEWELL, JL ;
SCHERER, A ;
MCCALL, SL ;
LEE, YH ;
WALKER, S ;
HARBISON, JP ;
FLOREZ, LT .
ELECTRONICS LETTERS, 1989, 25 (17) :1123-1124
[6]   TOP-SURFACE-EMITTING GAAS 4-QUANTUM-WELL LASERS EMITTING AT 0.85 MU-M [J].
LEE, YH ;
TELL, B ;
BROWNGOEBELER, K ;
JEWELL, JL ;
HOVE, JV .
ELECTRONICS LETTERS, 1990, 26 (11) :710-711
[7]   DEEP-RED CONTINUOUS WAVE TOP-SURFACE-EMITTING VERTICAL-CAVITY ALGAAS SUPERLATTICE LASERS [J].
LEE, YH ;
TELL, B ;
BROWNGOEBELER, KF ;
LEIBENGUTH, RE ;
MATTERA, VD .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (02) :108-109
[8]   SURFACE-EMITTING LASER OPERATION IN VERTICAL-TO-SURFACE TRANSMISSION ELECTROPHOTONIC DEVICES WITH A VERTICAL CAVITY [J].
NUMAI, T ;
SUGIMOTO, M ;
OGURA, I ;
KOSAKA, H ;
KASAHARA, K .
APPLIED PHYSICS LETTERS, 1991, 58 (12) :1250-1252
[9]   CASCADABLE LASER LOGIC DEVICES - DISCRETE INTEGRATION OF PHOTOTRANSISTORS WITH SURFACE-EMITTING LASER-DIODES [J].
OLBRIGHT, GR ;
BRYAN, RP ;
LEAR, K ;
BRENNAN, TM ;
POIRIER, G ;
LEE, YH ;
JEWELL, JL .
ELECTRONICS LETTERS, 1991, 27 (03) :216-217