ELECTRICAL AND OPTICAL-PROPERTIES OF SILICON DOPED INP GROWN BY GAS SOURCE MBE

被引：7

作者：

MORISHITA, Y ^{[1
]}

IMAIZUMI, M ^{[1
]}

GOTODA, M ^{[1
]}

MARUNO, S ^{[1
]}

NOMURA, Y ^{[1
]}

OGATA, H ^{[1
]}

机构：

[1] OPTOELECTR TECHNOL RES CORP,AMAGASAKI 661,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 104卷 / 02期

关键词：

D O I：

10.1016/0022-0248(90)90147-D

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A detailed investigation was carried out on the characteristics of Si-doped InP grown by gas source MBE (GSMBE) using trimethylindium, phosphine and solid Si source. It has been found that the InP epitaxial layers grown by GSMBE have excellent qualities comparable to those grown by other epitaxial techniques. Good agreement was obtained between the Si equilibrium vapor pressure curve and the temperature dependence of the carrier concentration in the range from 6X1015 to 6X1018 cm-3. The Burstein-Moss shift was observed in the photoluminescence spectra. © 1990.

引用

页码：457 / 462

页数：6

共 16 条

[1] CONCENTRATION-DEPENDENT ABSORPTION AND PHOTOLUMINESCENCE OF N-TYPE INP
BUGAJSKI, M
LEWANDOWSKI, W
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 521 - 530
[2] DOPING OF GAAS IN METALORGANIC MBE USING GASEOUS SOURCES
HEINECKE, H
WERNER, K
WEYERS, M
LUTH, H
BALK, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 270 - 275
[3] JIANG DS, 1982, J APPL PHYS, V53, P999, DOI 10.1063/1.330581
[4] SN DOPING FOR INP AND INGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TETRAETHYLTIN
KAWAGUCHI, Y
NAKASHIMA, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 181 - 184
[5] HIGH-TEMPERATURE OBSERVATION OF HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN INGAAS/INP MULTIPLE QUANTUM-WELL STRUCTURES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
KAWAGUCHI, Y
ASAHI, H
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1243 - 1245
[6] KAWAGUCHI Y, 1986, I PHYS C SER, V79, P79
[7] SILICON DOPING FROM DISILANE IN GAS SOURCE MBE OF GAAS
KIMURA, K
HORIGUCHI, S
KAMON, K
SHIMAZU, M
MASHITA, M
MIHARA, M
ISHII, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 276 - 280
[8] ELECTRICAL AND OPTICAL-PROPERTIES OF INP GROWN BY MBE USING P+ ION-BEAM
MORISHITA, Y
MARUNO, S
ISU, T
NOMURA, Y
OGATA, H
KURAMOTO, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 88 (02) : 215 - 220
[9] GAS SOURCE MBE GROWTH OF INP
MORISHITA, Y
MARUNO, S
GOTODA, M
NOMURA, Y
OGATA, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 176 - 180
[10] HIGH-QUALITY INP GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
MILLER, RC
CAPASSO, F
BONNER, WA
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 467 - 469

← 1 2 →