OXIDE OPTIMIZATION AT THE P-SI-AQUEOUS ELECTROLYTE INTERFACE

被引：25

作者：

LEWERENZ, HJ

LUBKE, M

BACHMANN, KJ

MENEZES, S

机构：

[1] N CAROLINA STATE UNIV, RALEIGH, NC 27650 USA

[2] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 10期

关键词：

D O I：

10.1063/1.92587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：798 / 800

页数：3

共 22 条

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON
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[2] SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE
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[3] USE OF CHEMICALLY DERIVATIZED N-TYPE SILICON PHOTOELECTRODES IN AQUEOUS-MEDIA - PHOTO-OXIDATION OF IODIDE, HEXACYANOIRON(II), AND HEXAAMMINERUTHENIUM(II) AT FERROCENE-DERIVATIZED PHOTOANODES
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[4] PHOTOELECTROCHEMICAL REDUCTION OF N,N'-DIMETHYL-4,4'-BIPYRIDINIUM IN AQUEOUS-MEDIA AT P-TYPE SILICON - SUSTAINED PHOTOGENERATION OF A SPECIES CAPABLE OF EVOLVING HYDROGEN
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[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1979, 101 (26) : 7721 - 7723
[5] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES
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SNOW, EH
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &
[6] BND EDGE OF AMORPHOUS SIO2 BY PHOTOINJECTION AND PHOTOCONDUCTIVITY MEASUREMENTS
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[J]. SOLID STATE COMMUNICATIONS, 1971, 9 (24) : 2259 - +
[7] PHOTOEMISSION MEASUREMENTS OF INTERFACE BARRIER ENERGIES FOR TUNNEL OXIDES ON SILICON
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BARKER, RC
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (11) : 933 - 935
[8] EXPERIMENTAL-DETERMINATION OF ABSOLUTE HALF-CELL EMFS AND SINGLE ION FREE-ENERGIES OF SOLVATION
GOMER, R
TRYSON, G
[J]. JOURNAL OF CHEMICAL PHYSICS, 1977, 66 (10) : 4413 - 4424
[9] PHOTOEMISSION OF ELECTRONS FROM METALS INTO SILICON DIOXIDE
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ONEILL, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3580 - &
[10] PHOTOEMISSION OF ELECTRONS FROM N-TYPE DEGENERATE SILICON INTO SILICON DIOXIDE
GOODMAN, AM
[J]. PHYSICAL REVIEW, 1966, 152 (02): : 785 - +

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