SILICON-NITRIDE COATINGS ON COPPER

被引：3

作者：

AUDISIO, SC

LEIDHEIS.H

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 04期

关键词：

D O I：

10.1149/1.2404218

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：408 / &

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[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS OBTAINED BY REACTION OF SIBR4 AND NH3
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[2] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
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[3] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
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[4] DEPOSITING SILICON NITRIDE LAYERS AT LOW TEMPERATURE USING A PHOTOCHEMICAL REACTION
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[5] CONSTANTIN C, 1968, ONDE ELECTRIQUE, V48, P327
[6] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE
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[7] SILICON NITRIDE THIN FILMS FROM SICL4 PLUS NH3 - PREPARATION AND PROPERTIES
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[8] SILICON NITRIDE FILMS BY REACTIVE SPUTTERING
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) : 826 - +
[9] PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
HU, SM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 693 - +
[10] SOME PROPERTIES OF SILICON NITRIDE FILMS PRODUCED BY RADIO FREQUENCY GLOW DISCHARGE REACTION OF SILANE AND NITROGEN
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (07) : 876 - &