ELECTRON-BEAM-INDUCED DEPOSITION OF TUNGSTEN

被引：11

作者：

BELL, DA

FALCONER, JL

LU, ZM

MCCONICA, CM

机构：

[1] COLORADO STATE UNIV,DEPT AGR & CHEM ENGN,FT COLLINS,CO 80523

[2] UNIV COLORADO,DEPT CHEM ENGN,BOULDER,CO 80309

[3] COLORADO STATE UNIV,DEPT AGR & CHEM ENGN,FT COLLINS,CO 80523

[4] UNIV COLORADO,DEPT CHEM ENGN,BOULDER,CO 80309

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 05期

关键词：

D O I：

10.1116/1.587545

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tungsten films were deposited by decomposing films of frozen tungsten hexafluoride (WF6) with an electron beam and then warming the substrate to remove unreacted WF6. Deposition rates increase with increasing beam intensity.

引用

页码：2976 / 2979

页数：4

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