ARF EXCIMER LASER DOPING OF BORON INTO SILICON

[1] SURFACE DOPING OF SEMICONDUCTORS BY PULSED-LASER IRRADIATION IN REACTIVE ATMOSPHERE [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (04): : 317 - 324

[2] BENTINI GG, 1987, EMRS M, V15, P273

[3] ULTRA-SHALLOW HIGH-CONCENTRATION BORON PROFILES FOR CMOS PROCESSING [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) : 291 - 293

[4] A SHALLOW JUNCTION SUBMICROMETER PMOS PROCESS WITHOUT HIGH-TEMPERATURE ANNEALS [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) : 542 - 544

[5] LASER-INDUCED MOLECULAR PROCESSES ON SURFACES [J]. SURFACE SCIENCE, 1986, 178 (1-3) : 763 - 786

[6] CORRERA L, 1989, APPL SURF SCI, V36, P394

[7] OHMIC CONTACT FORMATION ON INP BY PULSED LASER PHOTOCHEMICAL DOPING [J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 847 - 849

[8] ELECTRICAL-PROPERTIES OF LASER CHEMICALLY DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 825 - 827

[9] UV LASER INCORPORATION OF DOPANTS INTO SILICON - COMPARISON OF 2 PROCESSES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2167 - 2173

[10] OPTIMIZATION OF THE PARAMETERS INVOLVED IN THE PHOTOCHEMICAL DOPING OF SI WITH A PULSED ARF EXCIMER LASER [J]. APPLIED SURFACE SCIENCE, 1989, 36 (1-4) : 384 - 393

[1] SURFACE DOPING OF SEMICONDUCTORS BY PULSED-LASER IRRADIATION IN REACTIVE ATMOSPHERE [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (04): : 317 - 324

[2] BENTINI GG, 1987, EMRS M, V15, P273

[3] ULTRA-SHALLOW HIGH-CONCENTRATION BORON PROFILES FOR CMOS PROCESSING [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) : 291 - 293

[4] A SHALLOW JUNCTION SUBMICROMETER PMOS PROCESS WITHOUT HIGH-TEMPERATURE ANNEALS [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) : 542 - 544

[5] LASER-INDUCED MOLECULAR PROCESSES ON SURFACES [J]. SURFACE SCIENCE, 1986, 178 (1-3) : 763 - 786

[6] CORRERA L, 1989, APPL SURF SCI, V36, P394

[7] OHMIC CONTACT FORMATION ON INP BY PULSED LASER PHOTOCHEMICAL DOPING [J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 847 - 849

[8] ELECTRICAL-PROPERTIES OF LASER CHEMICALLY DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 825 - 827

[9] UV LASER INCORPORATION OF DOPANTS INTO SILICON - COMPARISON OF 2 PROCESSES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2167 - 2173

[10] OPTIMIZATION OF THE PARAMETERS INVOLVED IN THE PHOTOCHEMICAL DOPING OF SI WITH A PULSED ARF EXCIMER LASER [J]. APPLIED SURFACE SCIENCE, 1989, 36 (1-4) : 384 - 393