DISORDERING OF ALAS-GAAS SUPERLATTICES BY SI AND S IMPLANTATION AT DIFFERENT IMPLANT TEMPERATURES

[11] DISORDERING OF SI-DOPED ALAS/GAAS SUPERLATTICE BY ANNEALING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L623 - L624

[12] PROJECTED RANGE AND DAMAGE DISTRIBUTIONS IN ION-IMPLANTED AL, SI, AL2O3, AND GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) : 3377 - 3387

[13] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[14] DISORDER OF AN ALXGA1-XAS-GAAS SUPERLATTICE BY DONOR DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 549 - 551

[15] MIYAZAKI T, 1975, 1974 P INT C ION IMP, P41

[16] PROSPECTS FOR ION-BOMBARDMENT AND ION-IMPLANTATION IN GAAS AND INP DEVICE FABRICATION [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (04): : 109 - 130

[17] DEFECT STRUCTURE AND INTERMIXING OF ION-IMPLANTED ALXGA1-XAS/GAAS SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 120 - 123

[18] DISORDERING OF GA1-XALXAS-GAAS QUANTUM WELL STRUCTURES BY DONOR SULFUR DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 867 - 869

[19] Sansbury J. D., 1970, Radiation Effects, V6, P269, DOI 10.1080/00337577008236306

[20] EFFECT OF INTERFACES UPON ATOMIC DIFFUSION - SI AND ZN IN GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 569 - 572

[11] DISORDERING OF SI-DOPED ALAS/GAAS SUPERLATTICE BY ANNEALING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L623 - L624

[12] PROJECTED RANGE AND DAMAGE DISTRIBUTIONS IN ION-IMPLANTED AL, SI, AL2O3, AND GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) : 3377 - 3387

[13] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[14] DISORDER OF AN ALXGA1-XAS-GAAS SUPERLATTICE BY DONOR DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 549 - 551

[15] MIYAZAKI T, 1975, 1974 P INT C ION IMP, P41

[16] PROSPECTS FOR ION-BOMBARDMENT AND ION-IMPLANTATION IN GAAS AND INP DEVICE FABRICATION [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (04): : 109 - 130

[17] DEFECT STRUCTURE AND INTERMIXING OF ION-IMPLANTED ALXGA1-XAS/GAAS SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 120 - 123

[18] DISORDERING OF GA1-XALXAS-GAAS QUANTUM WELL STRUCTURES BY DONOR SULFUR DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 867 - 869

[19] Sansbury J. D., 1970, Radiation Effects, V6, P269, DOI 10.1080/00337577008236306

[20] EFFECT OF INTERFACES UPON ATOMIC DIFFUSION - SI AND ZN IN GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 569 - 572