REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING THE GROWTH BY MOLECULAR-BEAM EPITAXY OF GAAS(110) FILMS

被引：22

作者：

NEAVE, JH

ZHANG, J

ZHANG, XM

FAWCETT, PN

JOYCE, BA

机构：

[1] Semiconductor Materials Interdisciplinary Research Centre, Blackett Laboratory, Imperial College, London SW7 2BZ, Prince Consort Road

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.108596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reflection high energy electron diffraction (RHEED) intensity oscillations are reported for GaAs growth by molecular beam epitaxy (MBE) on singular GaAs (110) substrates. The behavior is quite different from that observed for any other system involving a singular surface and elemental sources, in that the oscillation period is a function of temperature, flux ratio, and growth time. The results are discussed in terms of possible growth modes and relative adatom populations.

引用

页码：753 / 755

页数：3

共 10 条

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