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IMPULSE CURRENT BEHAVIOR OF MOS STRUCTURES WITH EXTERNAL P-N-JUNCTION CONNECTED TO SUBSTRATE IN LINEAR VOLTAGE APPLIED TO A GATE
被引:5
作者
:
KADEN, G
论文数:
0
引用数:
0
h-index:
0
机构:
VEB KOMBINAT MIKROELEKTR,VEB WERK FERNSEHELEKTR,BERLIN,GER DEM REP
KADEN, G
REIMER, H
论文数:
0
引用数:
0
h-index:
0
机构:
VEB KOMBINAT MIKROELEKTR,VEB WERK FERNSEHELEKTR,BERLIN,GER DEM REP
REIMER, H
机构
:
[1]
VEB KOMBINAT MIKROELEKTR,VEB WERK FERNSEHELEKTR,BERLIN,GER DEM REP
[2]
VEB KOMBINAT MIKROELEKT,ERFURT,GER DEM REP
来源
:
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
|
1979年
/ 52卷
/ 01期
关键词
:
D O I
:
10.1002/pssa.2210520104
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:35 / 46
页数:12
相关论文
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THEORY OF DYNAMIC CHARGE CURRENT AND CAPACITANCE CHARACTERISTICS IN MIS SYSTEMS CONTAINING DISTRIBUTED SURFACE TRAPS
[J].
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UNIV TORONTO, ELECT ENGN DEPT, TORONTO, ONTARIO, CANADA
WEI, LS
.
SOLID-STATE ELECTRONICS,
1973,
16
(01)
:53
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[22]
TANIGAWA H, 1973, P IEEE, V61, P491, DOI 10.1109/PROC.1973.9085
[23]
THEORY OF MOS-TRANSISTOR IN WEAK INVERSION - NEW METHOD TO DETERMINE NUMBER OF SURFACE STATES
[J].
VANOVERSTRAETEN, RJ
论文数:
0
引用数:
0
h-index:
0
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KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,FYS & ELEKTR HALFGELEIDERS LAB,KARDINAAL MERCIERLAAN 94,B-3030 HEVERLEE,BELGIUM
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,FYS & ELEKTR HALFGELEIDERS LAB,KARDINAAL MERCIERLAAN 94,B-3030 HEVERLEE,BELGIUM
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DECLERCK, GJ
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KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,FYS & ELEKTR HALFGELEIDERS LAB,KARDINAAL MERCIERLAAN 94,B-3030 HEVERLEE,BELGIUM
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,FYS & ELEKTR HALFGELEIDERS LAB,KARDINAAL MERCIERLAAN 94,B-3030 HEVERLEE,BELGIUM
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KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,FYS & ELEKTR HALFGELEIDERS LAB,KARDINAAL MERCIERLAAN 94,B-3030 HEVERLEE,BELGIUM
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,FYS & ELEKTR HALFGELEIDERS LAB,KARDINAAL MERCIERLAAN 94,B-3030 HEVERLEE,BELGIUM
MULS, PA
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(05)
:282
-288
[24]
INADEQUACY OF CLASSICAL THEORY OF MOS-TRANSISTOR OPERATING IN WEAK INVERSION
[J].
VANOVERSTRAETEN, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
KATHOLIEKE UNIV LEUVEN, DEPT ELEKTROTECH, LAB FYS & ELEKTR HALFGELEIDERS, LEUVEN, BELGIUM
KATHOLIEKE UNIV LEUVEN, DEPT ELEKTROTECH, LAB FYS & ELEKTR HALFGELEIDERS, LEUVEN, BELGIUM
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KATHOLIEKE UNIV LEUVEN, DEPT ELEKTROTECH, LAB FYS & ELEKTR HALFGELEIDERS, LEUVEN, BELGIUM
KATHOLIEKE UNIV LEUVEN, DEPT ELEKTROTECH, LAB FYS & ELEKTR HALFGELEIDERS, LEUVEN, BELGIUM
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KATHOLIEKE UNIV LEUVEN, DEPT ELEKTROTECH, LAB FYS & ELEKTR HALFGELEIDERS, LEUVEN, BELGIUM
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[25]
EFFECT OF TEMPERATURE AND VOLTAGE SWEEP RATE ON C-V CHARACTERISTICS OF MIS CAPACITORS
[J].
WEI, LS
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0
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0
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0
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UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA
WEI, LS
;
SIMMONS, JG
论文数:
0
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←
1
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3
→
共 26 条
[21]
THEORY OF DYNAMIC CHARGE CURRENT AND CAPACITANCE CHARACTERISTICS IN MIS SYSTEMS CONTAINING DISTRIBUTED SURFACE TRAPS
[J].
SIMMONS, JG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO, ELECT ENGN DEPT, TORONTO, ONTARIO, CANADA
UNIV TORONTO, ELECT ENGN DEPT, TORONTO, ONTARIO, CANADA
SIMMONS, JG
;
WEI, LS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO, ELECT ENGN DEPT, TORONTO, ONTARIO, CANADA
UNIV TORONTO, ELECT ENGN DEPT, TORONTO, ONTARIO, CANADA
WEI, LS
.
SOLID-STATE ELECTRONICS,
1973,
16
(01)
:53
-66
[22]
TANIGAWA H, 1973, P IEEE, V61, P491, DOI 10.1109/PROC.1973.9085
[23]
THEORY OF MOS-TRANSISTOR IN WEAK INVERSION - NEW METHOD TO DETERMINE NUMBER OF SURFACE STATES
[J].
VANOVERSTRAETEN, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,FYS & ELEKTR HALFGELEIDERS LAB,KARDINAAL MERCIERLAAN 94,B-3030 HEVERLEE,BELGIUM
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,FYS & ELEKTR HALFGELEIDERS LAB,KARDINAAL MERCIERLAAN 94,B-3030 HEVERLEE,BELGIUM
VANOVERSTRAETEN, RJ
;
DECLERCK, GJ
论文数:
0
引用数:
0
h-index:
0
机构:
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,FYS & ELEKTR HALFGELEIDERS LAB,KARDINAAL MERCIERLAAN 94,B-3030 HEVERLEE,BELGIUM
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,FYS & ELEKTR HALFGELEIDERS LAB,KARDINAAL MERCIERLAAN 94,B-3030 HEVERLEE,BELGIUM
DECLERCK, GJ
;
MULS, PA
论文数:
0
引用数:
0
h-index:
0
机构:
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,FYS & ELEKTR HALFGELEIDERS LAB,KARDINAAL MERCIERLAAN 94,B-3030 HEVERLEE,BELGIUM
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,FYS & ELEKTR HALFGELEIDERS LAB,KARDINAAL MERCIERLAAN 94,B-3030 HEVERLEE,BELGIUM
MULS, PA
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(05)
:282
-288
[24]
INADEQUACY OF CLASSICAL THEORY OF MOS-TRANSISTOR OPERATING IN WEAK INVERSION
[J].
VANOVERSTRAETEN, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
KATHOLIEKE UNIV LEUVEN, DEPT ELEKTROTECH, LAB FYS & ELEKTR HALFGELEIDERS, LEUVEN, BELGIUM
KATHOLIEKE UNIV LEUVEN, DEPT ELEKTROTECH, LAB FYS & ELEKTR HALFGELEIDERS, LEUVEN, BELGIUM
VANOVERSTRAETEN, RJ
;
DECLERCK, G
论文数:
0
引用数:
0
h-index:
0
机构:
KATHOLIEKE UNIV LEUVEN, DEPT ELEKTROTECH, LAB FYS & ELEKTR HALFGELEIDERS, LEUVEN, BELGIUM
KATHOLIEKE UNIV LEUVEN, DEPT ELEKTROTECH, LAB FYS & ELEKTR HALFGELEIDERS, LEUVEN, BELGIUM
DECLERCK, G
;
BROUX, GL
论文数:
0
引用数:
0
h-index:
0
机构:
KATHOLIEKE UNIV LEUVEN, DEPT ELEKTROTECH, LAB FYS & ELEKTR HALFGELEIDERS, LEUVEN, BELGIUM
KATHOLIEKE UNIV LEUVEN, DEPT ELEKTROTECH, LAB FYS & ELEKTR HALFGELEIDERS, LEUVEN, BELGIUM
BROUX, GL
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(12)
:1150
-1153
[25]
EFFECT OF TEMPERATURE AND VOLTAGE SWEEP RATE ON C-V CHARACTERISTICS OF MIS CAPACITORS
[J].
WEI, LS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA
WEI, LS
;
SIMMONS, JG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA
SIMMONS, JG
.
SOLID-STATE ELECTRONICS,
1974,
17
(10)
:1021
-1028
[26]
RESISTIVE MOS-GATED DIODE LIGHT SENSOR
[J].
WHELAN, MV
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
WHELAN, MV
.
SOLID-STATE ELECTRONICS,
1973,
16
(02)
:161
-171
←
1
2
3
→