COMPENSATION MECHANISM IN HEAVILY SI-DOPED GAAS GROWN BY MBE

被引：15

作者：

UEMATSU, M

MAEZAWA, K

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 04期

关键词：

Carrier compensation; DX center; Laser Raman spectroscopy; Localized vibrational modes; MBE growth; Si-d oped GaAs;

D O I：

10.1143/JJAP.29.L527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The concentrations of Si-related sites in heavily Si-doped GaAs grown by MBE at 450°C and 65O°C are investigated by laser Raman spectroscopy. Almost all of the Si atoms are incorporated on Ga sites in both samples. However, in the 650°C sample, about one third of the Si atoms on Ga sites (SiGa) associate with Ga vacancies (VGa) to form the SiGa-VGaacceptors, which dominate the compensation mechanism. © 1990 IOP Publishing Ltd.

引用

页码：L527 / L529

页数：3

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