CHARACTERIZATION OF LATTICE SITES AND COMPENSATION MECHANISM IN HEAVILY SI-DOPED GAAS WITH LASER RAMAN-SPECTROSCOPY

被引：9

作者：

UEMATSU, M

MAEZAWA, K

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01, 3-1, Morinosato Wakamiya

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1990年 / 29卷 / 02期

关键词：

Carrier compensation; DX center; Laser Raman spectroscopy; Localized vibrational modes; MBE growth; Si-doped GaAs; Si-implantation;

D O I：

10.1143/JJAP.29.301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lattice sites in heavily Si-doped GaAs have been investigated by means of Raman spectroscopy. Localized vibrational modes (LVM) due to SiGa-VGa complex and SiGa were observed as well as SiGa-SiAs pair and SiAs modes. Raman scattering efficiency was obtained from the spectrum area of each mode. The concentrations of these four Si-related sites were estimated, and the results indicate that the carrier compensation mechanism after annealing is dominated by SiGa-VGa acceptors and/or SiGa-SiAs neutral pairs depending on the annealing conditions. The compensation mechanism of the as-grown sample and Si-implanted GaAs has also been studied. © 1990 The Japan Society of Applied Physics.

引用

页码：301 / 304

页数：4

共 13 条

[1] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].